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  1 lt1317/lt1317b micropower, 600khz pwm dc/dc converters descriptio n u features the lt ? 1317/lt1317b are micropower, fixed frequency step-up dc/dc converters that operate over a wide input voltage range of 1.5v to 12v. the lt1317 features auto- matic shifting to power saving burst mode tm operation at light loads. high efficiency is maintained over a broad 300 m a to 200ma load range. peak switch current during burst mode operation is kept below 250ma for most operating conditions which results in low output ripple voltage, even at high input voltages. the lt1317b does not shift into burst mode operation at light loads, eliminat- ing low frequency output ripple at the expense of light load efficiency. the lt1317/lt1317b contain an internal low-battery de- tector with a 200mv reference that stays alive when the device goes into shutdown. no-load quiescent current of the lt1317 is 100 m a and shuts down to 30 m a. the internal npn power switch handles a 500ma current with a voltage drop of just 300mv. the lt1317/lt1317b are available in ms8 and so-8 packages. n 100 m a quiescent current n operates with v in as low as 1.5v n 600khz fixed frequency operation n starts into full load n low-battery detector active in shutdown n automatic burst mode operation at light load (lt1317) n continuous switching at light loads (lt1317b) n low v cesat switch: 300mv at 500ma n pin for pin compatible with the lt1307/lt1307b n cellular telephones n cordless telephones n pagers n gps receivers n battery backup n portable electronic equipment n glucose meters n diagnostic medical instrumentation applicatio n s u burst mode is a trademark of linear technology corporation. , ltc and lt are registered trademarks of linear technology corporation. typical applicatio n u figure 1. 2-cell to 3.3v boost converter v in sw fb lt1317 l1 10 m h d1 lbo lbi shdn shutdown r c 33k r2* 604k 1% 3.3v 200ma r1 1m 1% c c 3.3nf 1317 f01 c1 47 m f c2 47 m f 2 cells d1: mbr0520 l1: sumida cd43-100 * for 5v output, r2 = 332k, 1% v c gnd + + 2-cell to 3.3v converter efficiency load current (ma) 50 efficiency (%) 60 70 80 90 0.3 10 100 1000 1317 ta01 40 1 3v in 1.65v in 2.2v in
2 lt1317/lt1317b order part number a u g w a w u w a r b s o lu t exi t i s v in , lbo voltage ..................................................... 12v sw voltage ............................................... C 0.4v to 30v fb voltage .................................................... v in + 0.3v v c voltage ................................................................ 2v lbi voltage ............................................ 0v v lbi 1v shdn voltage ............................................................ 6v junction temperature .......................................... 125 c operating temperature range commercial ........................................... 0 c to 70 c industrial ............................................ C 40 c to 85 c storage temperature range ................ C 65 c to 150 c lead temperature (soldering, 10 sec)................ 300 c wu u package / o rder i for atio order part number 1 2 3 4 v c fb shdn gnd 8 7 6 5 lbo lbi v in sw top view ms8 package 8-lead plastic msop t jmax = 125 c, q ja = 160 c/w 1 2 3 4 8 7 6 5 top view lbo lbi v in sw v c fb shdn gnd s8 package 8-lead plastic so t jmax = 125 c, q ja = 120 c/w symbol parameter conditions min typ max units i q quiescent current not switching, v shdn = 2v (lt1317) l 100 160 m a v shdn = 0v (lt1317/lt1317b) l 25 40 m a v shdn = 2v, switching (lt1317b) 4.8 6.5 ma v shdn = 2v, switching (lt1317b) l 7.5 ma v fb feedback voltage 1.22 1.24 1.26 v l 1.20 1.24 1.26 v i b fb pin bias current (note 2) l 12 60 na input voltage range l 1.5 12 v g m error amp transconductance d i = 5 m a l 70 140 240 m mhos a v error amp voltage gain 700 v/v maximum duty cycle l 80 85 % switch current limit (note 3) v in = 2.5v, duty cycle = 30% 710 800 1300 ma v in = 2.5v, duty cycle = 30% l 660 1350 ma burst mode operation switch current limit duty cycle = 30% (lt1317) 275 ma f osc switching frequency l 520 620 720 khz e lectr ic al c c hara terist ics commercial grade v in = 2v, v shdn = 2v, t a = 25 c, unless otherwise noted. consult factory for military grade parts. ms8 part marking s8 part marking lt1317cs8 lt1317bcs8 lt1317is8 lt1317bis8 1317 1317b 1317i 1317bi ltha lthb lt1317cms8 lt1317bcms8 (note 1)
3 lt1317/lt1317b e lectr ic al c c hara terist ics commercial grade v in = 2v, v shdn = 2v, t a = 25 c unless otherwise noted. industrial grade v in = 2v, v shdn = 2v, C 40 c t a 85 c unless otherwise noted. symbol parameter conditions min typ max units i q quiescent current not switching, v shdn = 2v (lt1317) l 160 m a v shdn = 0v (lt1317/lt1317b) l 40 m a v shdn = 2v, switching (lt1317b) l 7.5 ma v fb feedback voltage l 1.20 1.26 v i b fb pin bias current (note 2) l 80 na input voltage range l 1.7 12 v g m error amp transconductance d i = 5 m a l 70 140 240 m mhos maximum duty cycle l 80 % switch current limit (note 3) v in = 2.5v, duty cycle = 30% l 550 1350 ma f osc switching frequency l 500 750 khz shutdown pin current v shdn = v in l 0.1 m a v shdn = 0v l C7 m a lbi threshold voltage l 180 220 mv lbo output low i sink = 10 m a l 0.25 v lbo leakage current v lbi = 250mv, v lbo = 5v l 0.1 m a lbi input bias current (note 4) v lbi = 150mv l 60 na switch leakage current v sw = 5v l 3 m a switch v ce sat i sw = 500ma l 400 mv reference line regulation 1.8v v in 12v l 0.15 %/v shdn input voltage high l 1.4 6 v shdn input voltage low l 0.4 v symbol parameter conditions min typ max units shutdown pin current v shdn = v in l 0.015 0.06 m a v shdn = 0v l C 2.3 C 6 m a lbi threshold voltage 190 200 210 mv l 180 200 220 mv lbo output low i sink = 10 m a l 0.15 0.25 v lbo leakage current v lbi = 250mv, v lbo = 5v l 0.02 0.1 m a lbi input bias current (note 4) v lbi = 150mv l 540na low-battery detector gain 1m w load 2000 v/v switch leakage current v sw = 5v l 0.01 3 m a switch v ce sat i sw = 500ma 300 350 mv l 400 mv reference line regulation 1.8v v in 12v l 0.08 0.15 %/v shdn input voltage high l 1.4 6 v shdn input voltage low l 0.4 v note 2: bias current flows into fb pin. note 3: switch current limit guaranteed by design and/or correlation to static tests. duty cycle affects current limit due to ramp generator. note 4: bias current flows out of lbi pin. the l denotes specifications which apply over the full operating temperature range. note 1: absolute maximum ratings are those values beyond which the life of a device may be impaired.
4 lt1317/lt1317b typical perfor a ce characteristics uw input voltage 0 oscillator frequency (khz) 700 650 600 550 500 2468 1317 tpc01 10 12 25 c ?0 c 85 c oscillator frequency duty cycle (%) 0 20406080100 switch current (ma) 1317 tpc02 800 600 400 200 0 v in = 2v l = 10 h burst mode current limit (lt1317) switch current limit, duty cycle = 30% switch current (a) 0 0.2 0.4 0.6 0.8 1 switch voltage (v cesat ) (mv) 1317 tpc06 700 600 500 400 300 200 100 0 25 c ?0 c 85 c switch voltage drop (v cesat ) temperature ( c) ?0 0 50 25 25 75 100 lbi input bias current (na) 1317 tpc05 6 5 4 3 2 1 0 lbi input bias current switch current limit temperature ( c) ?0 25 quiescent current ( a) 1317 tpc09 110 100 90 80 70 60 50 40 30 0 255075100 quiescent current, shdn = 2v temperature ( c) ?0 feedback voltage (v) 1.25 1.24 1.23 1.22 1.21 1.20 ?5 0 25 50 1317 tpc07 75 100 feedback voltage temperature ( c) ?0 lbi reference voltage (mv) 1317 tpc08 203 202 201 200 199 198 197 196 195 ?5 0 25 50 75 100 lbi reference voltage temperature ( c) ?0 switch current (ma) 1000 900 800 700 600 500 ?5 0 25 50 1317 tpc03 75 100 duty cycle (%) 0 switch current (ma) 1200 1000 800 600 400 200 20 40 60 80 1317 tpc04 100 minimum (25 c) typical
5 lt1317/lt1317b typical perfor a ce characteristics uw temperature ( c) ?0 quiescent current ( a) 26 25 24 23 22 21 20 ?5 0 25 50 1317 tpc10 75 100 temperature ( c) ?0 ?5 0 25 50 75 100 fb pin bias current (na) 1317 tpc11 40 36 32 28 24 20 16 12 8 4 0 quiescent current, shdn = 0v fb pin bias current shdn pin current load current (ma) 1 efficiency (%) 90  80  70  60  50  40 10 100 1000 1317 tpc14 v in = 3v v in = 2.2v v in = 1.65v load current (ma) 1 efficiency (%) 90  80  70  60  50  40 10 100 1000 1317 tpc15 v in = 3v v in = 2.2v v in = 1.65v load current (ma) efficiency (%) 90 80 70 60 50 10 100 1000 1317 tpc13 1 0.3 v in = 3v v in = 2.2v v in = 1.65v 5v output efficiency, circuit of figure 1 (lt1317) 2-cell to 3.3v converter efficiency (lt1317b) 2-cell to 5v converter efficiency (lt1317b) burst mode operation (lt1317) v out 50mv/div ac coupled i l 200ma/div v sw 5v/div v in = 2v 20 m s/div 1317 tpc18 v out = 3.3v i load = 30ma circuit of figure 1 transient response (lt1317b) v out 100mv/div ac coupled i l 200ma/div v in = 2v 1ms/div 1317 tpc17 v out = 3.3v circuit of figure 1 with lt1317b transient response (lt1317) v out 100mv/div ac coupled i l 200ma/div v in = 2v 1ms/div 1317 tpc16 v out = 3.3v circuit of figure 1 i load 165ma 5ma i load 165ma 5ma shdn pin voltage (v) 0 shdn pin current ( a) 3 5 1317 tpc12 12 4 2 1 0 ? ? ? 6
6 lt1317/lt1317b typical perfor a ce characteristics uw load regulation (lt1317) v in = 1.5v i load 25ma/div 1317 tpc19 v out = 5v v out 50mv/div dc coupled offset added load regulation (lt1317) v in = 2v i load 25ma/div 1317 tpc20 v out = 5v v out 50mv/div dc coupled offset added load regulation (lt1317) v in = 2.5v i load 50ma/div 1317 tpc21 v out = 5v v out 50mv/div dc coupled offset added load regulation (lt1317) v in = 1.5v i load 25ma/div 1317 tpc22 v out = 3.3v load regulation (lt1317) v in = 2v i load 50ma/div 1317 tpc23 v out = 3.3v load regulation (lt1317) v in = 2.5v i load 50ma/div 1317 tpc24 v out = 3.3v v out 50mv/div dc coupled offset added v out 50mv/div dc coupled offset added v out 50mv/div dc coupled offset added note: for load regulation pictures, double lines are due to output capacitor esr. v c (pin 1): compensation pin for error amplifier. con- nect a series rc network from this pin to ground. typical values for compensation are a 33k/3.3nf combination. a 100pf capacitor from the v c pin to ground is optional and improves noise immunity. minimize trace area at v c . fb (pin 2): feedback pin. reference voltage is 1.24v. connect resistor divider tap here. minimize trace area at fb. set v out according to: v out = 1.24v(1 + r1/r2). shdn (pin 3): shutdown. pull this pin low for shutdown mode (only the low-battery detector remains active). leave this pin floating or tie to a voltage between 1.4v and 6v to enable the device. shdn pin is logic level and need only meet the logic specification (1.4v for high, 0.4v for low). pi n fu n ctio n s uuu gnd (pin 4): ground. connect directly to local ground plane. sw (pin 5): switch pin. connect inductor/diode here. minimize trace area at this pin to keep emi down. v in (pin 6): supply pin. must be bypassed close to the pin. lbi (pin 7): low-battery detector input. 200mv refer- ence. voltage on lbi must stay between ground and 700mv. low-battery detector remains active in shutdown mode. lbo (pin 8): low-battery detector output. open collec- tor, can sink 10 m a. a 1m w pull-up is recommended.
7 lt1317/lt1317b block diagra m w + + + + + + + s ramp generator 1.24v reference r bias v c g m fb enable 200mv a = 2 ff a1 comparator a2 comparator error amplifier a4 0.08 w driver sw gnd 1317 bd q3 q s 600khz oscillator 5 lbo lbi shdn shutdown 3 7 1 4 r1 (external) v out 8 r2 (external) fb 2 applicatio n s i n for m atio n wu u u operation the lt1317 combines a current mode, fixed frequency pwm architecture with burst mode micropower operation to maintain high efficiency at light loads. operation can best be understood by referring to the block diagram. the error amplifier compares voltage at the fb pin with the internal 1.24v bandgap reference and generates an error signal v c . when v c decreases below the bias voltage on hysteretic comparator a1, a1s output goes low, turning off all circuitry except the 1.24v reference, error amplifier and low-battery detector. total current consumption in this state is 100 m a. as output loading causes the fb voltage to decrease, v c increases causing a1s output to go high, in turn enabling the rest of the ic. switch current is limited to approximately 250ma initially after a1s output goes high. if the load is light, the output voltage (and fb voltage) will increase until a1s output goes low, turning off the rest of the lt1317. low frequency ripple voltage appears at the output. the ripple frequency is dependent on load current and output capacitance. this burst mode operation keeps the output regulated and reduces average current into the ic, resulting in high efficiency even at load currents of 300 m a or less. if the output load increases sufficiently, a1s output remains high, resulting in continuous operation. when the lt1317 is running continuously, peak switch current is controlled by v c to regulate the output voltage. the switch is turned on at the beginning of each switch cycle. when the sum- mation of a signal representing switch current and a ramp generator (introduced to avoid subharmonic oscillations at duty factors greater than 50%) exceeds the v c signal, comparator a2 changes state, resetting the flip-flop and turning off the switch. output voltage increases as switch current is increased. the output, attenuated by a resistor divider, appears at the fb pin, closing the overall loop. frequency compensation is provided by an external series rc network and an optional capacitor connected between the v c pin and ground. low-battery detector a4s open collector output (lbo) pulls low when the lbi pin voltage drops below 200mv. there is no hysteresis in a4, allowing it to be used as an amplifier in some applications. the low-battery detector remains active in shutdown. to enable the converter, shdn must be left floating or tied to a voltage between 1.4v and 6v.
8 lt1317/lt1317b the lt1317b differs from the lt1317 in that the bias point on a1 is set lower than on the lt1317 so that minimum switch current can drop below 50ma. because a1s bias point is set lower, there is no burst mode operation at light loads and the device continues switching at constant frequency. this results in the absence of low frequency output voltage ripple at the expense of light load efficiency. the difference between the two devices is clearly illus- trated in figure 2. the top two traces in figure 2 show an lt1317/lt1317b circuit, using the components indicated in figure 1, set to a 3.3v output. input voltage is 2v. load current is stepped from 2ma to 200ma for both circuits. low frequency burst mode operation voltage ripple is observed on trace a, while none is observed on trace b. applicatio n s i n for m atio n wu u u component selection inductors inductors appropriate for use with the lt1317 must possess three attributes. first, they must have low core loss at 600khz. most ferrite core units have acceptable losses at this switching frequency. inexpensive iron pow- der cores should be viewed suspiciously, as core losses can cause significant efficiency penalties at 600khz. sec- ond, the inductor must be able to handle peak switch current of the lt1317 without saturating. this places a lower limit on the physical size of the unit. molded chokes or chip inductors usually do not have enough core to support the lt1317 maximum peak switch current and are unsuitable for the application. lastly, the inductor should have low dcr (copper wire resistance) to prevent effi- ciency-killing i 2 r losses. linear technology has identified several inductors suitable for use with the lt1317. this is not an exclusive list. there are many magnetics vendors whose components are suitable for use. a few vendors components are listed in table 1. l c in c out d v out v in gnd multiple vias ground plane 1317 f03 1 2 3 4 8 7 6 5 lt1317 figure 3. recommended component placement. traces carrying high current are direct. trace area at fb pin and v c pin is kept low. lead length to battery should be kept short. 1ms/div 1317 f02 200ma lt1317 v out 100mv/div ac coupled lt1317b v out 100mv/div ac coupled 2ma trace a trace b i load figure 2. lt1317 exhibits ripple at 2ma load during burst mode operation, the lt1317b does not layout hints the lt1317 switches current at high speed, mandating careful attention to layout for proper performance. you will not get advertised performance with careless layouts. figure 3 shows recommended component placement. follow this closely in your pc layout. note the direct path of the switching loops. input capacitor c in must be placed close (< 5mm) to the ic package. as little as 10mm of wire or pc trace from c in to v in will cause problems such as inability to regulate or oscillation.
9 lt1317/lt1317b table 1. inductors suitable for use with the lt1317 max height part value dcr mfr (mm) comment lqh3c100 10 m h 0.57 murata-erie 2.0 smallest size, limited current handling do1608-103 10 m h 0.16 coilcraft 3.0 cd43-100 10 m h 0.18 sumida 3.2 cd54-100 10 m h 0.10 sumida 4.5 best efficiency ctx32ct-100 10 m h 0.50 coiltronics 2.2 1210 footprint capacitor selection low esr (equivalent series resistance) capacitors should be used at the output of the lt1317. for most applications a solid tantalum in a c or d case size works well. accept- able capacitance values range from 10 m f to 330 m f with esr falling between 0.1 w and 0.5 w . if component size is an issue, tantalum capacitors in smaller case sizes can be used but they have high esr and output voltage ripple may reach unacceptable levels. ceramic capacitors are an alternative because of their combination of small size and low esr. a 10 m f ceramic capacitor will work for some applications but the ex- tremely low esr of these capacitors may cause loop stability problems. compensation components will need applicatio n s i n for m atio n wu u u to be adjusted to ensure a stable system for the entire input voltage range. figure 4 shows a 2v to 3.3v converter with new values for r c and c c . figure 5 details transient response for this circuit. also, ceramic caps are prone to temperature effects and the designer must check loop stability over the operating temperature range (see section on frequency compensation). input bypass capacitor esr is less critical and smaller units may be used. if the input voltage source is physically near the v in pin (<5mm), a 10 m f ceramic or a 10 m f a case tantalum is adequate. diodes most of the application circuits on this data sheet specify the motorola mbr0520l surface mount schottky diode. in lower current applications, a 1n4148 can be used, although efficiency will suffer due to the higher forward drop. this effect is particularly noticeable at low output voltages. for higher voltage output applications, such as lcd bias generators, the extra drop is a small percentage of the output voltage so the efficiency penalty is small. the low cost of the 1n4148 makes it attractive wherever it can be used. in through hole applications the 1n5818 is the all around best choice. v in sw fb lt1317b l1 10 h d1 shdn r c 20k r2 604k 1% v out 3.3v r1 1m 1% c c 1500pf 1317 f04 c1 10 f v in 2v c2 10 f ceramic d1: mbr0520 l1: sumida cd43-100 v c gnd figure 4. 2v to 3.3v converter with a 10 m f ceramic output capacitor. r c and c c have been adjusted to give optimum transient response. 200 m s/div 1317 f05 v out 200mv/div ac coupled i load 5ma to 200ma figure 5. transient response for the circuit of figure 4.
10 lt1317/lt1317b frequency compensation the lt1317 has an external compensation pin (v c ) which allows the frequency response to be optimized for the circuit configuration. in most cases, the values used in figure 1 will work. some circuits may need additional compensation and a simple trial and error method for determining the necessary component values is given. figure 6 shows the test setup. a load step is applied and the resulting output voltage waveform is observed. fig- ures 7 through 10 detail the response for various values of r and c in the compensation network. the circuit of figure 7 starts with a large c and small r giving a highly overdamped system. this system will always be stable but the output voltage displays a long settling time of >5ms. figure 8s circuit has reduced c giving a shorter settling time but still overdamped. figure 9 shows the results when c is reduced to the point where the system becomes underdamped. the output voltage responds quickly ( ? 200 m s to 300 m s) but some ringing exists. figure 10 has applicatio n s i n for m atio n wu u u optimum r and c values giving the best possible settling time with adequate phase margin. an additional 100pf capacitor (c c2 ) is connected to the v c pin and is necessary if the lt1317 is operated near current limit. also, c c2 should be present when higher esr output capacitors are used. figure 6. frequency response test setup v in sw fb lt1317 10 h mbr0520l shdn r 604k 50 v out 3.3v 1m 15 2w c c c2 100pf 1317 f06 v c gnd v in 2v 47 f 47 f + + 1ms/div 1317 f09 i load 2ma to 200ma v out 100mv/div ac coupled 1ms/div 1317 f10 i load 2ma to 200ma v out 100mv/div ac coupled 5ms/div 1317 f07 i load 2ma to 200ma v out 100mv/div ac coupled 5ms/div 1317 f08 i load 2ma to 200ma v out 100mv/div ac coupled figure 8. reducing c to 22nf speeds up the response. (r = 33k) figure 10. 3.3nf and 33k gives the shortest settling time with no ringing. figure 9. using 680pf for c results in an underdamped system with ringing. (r = 33k) figure 7. with c = 56nf and r = 33k, the system is highly overdamped.
11 lt1317/lt1317b applicatio n s i n for m atio n wu u u single li-ion cell to 3.3v sepic converter typical applicatio s u low-battery detector the lt1317s low-battery detector is a simple pnp input gain stage with an open collector npn output. the nega- tive input of the gain stage is tied internally to a 200mv 5% reference. the positive input is the lbi pin. arrange- ment as a low-battery detector is straightforward. figure 11 details hookup. r1 and r2 need only be low enough in value so that the bias current of the lbi pin doesnt cause large errors. for r2, 100k is adequate. the 200mv reference can also be accessed as shown in figure 12. the low-battery detector remains active in shutdown. figure 12. accessing 200mv reference v in lt1317 lbi lbo 200k 10 m f gnd 10k 1317 f12 2n3906 v ref 200mv + lbo lbi to processor r1 1m r2 100k v in lt1317 1317 f11 3.3v gnd 200mv internal reference + r1 = v lb ?200mv 2 m a figure 11. setting low-battery detector trip point 3.3v sepic efficiency v in sw fb lt1317 l1a* c3 1 f l1b* mbr0520 shdn 33k 604k 1% v out 3.3v 250ma 1m 1% 3300pf 1317 ta03 c1, c2: avx tpsc476m010 c3: avx 1206yc106kat * coiltronics ctx20-1 v c gnd single li-ion cell (2.7v to 4.2v) c1 47 f + c2 47 f + load current (ma) 1 efficiency (%) 80 75 70 65 60 55 50 10 100 1000 1317 ta03a v in = 4.2v v in = 3.5v v in = 2.7v
12 lt1317/lt1317b typical applicatio s u shutdown l1 22 h mbr0520 shdn 56k 124k 1% 1.07m 1% 3300pf 1317 ta04 l1: sumida cd54-220 v in 5v v out 12v 150ma 47 f + c2 47 f + v in sw fb lb0 v c gnd shdn lt1317 shutdown v in sw fb lt1317 l1 10 h mbr0520 33k 324k 1% 1m 1% 3300pf 1317 ta05 l1: sumida cd43-100 v c gnd v out 5v 250ma single li-ion cell (2.7v to 4.2v) 47 f + 47 f + shdn v in sw fb lt1317bcms8 l1 10 h d1 shdn 33k 332k 1m 3.3nf 1317 ta06 c1: avx taja156m010 c2: murata grm235y5v106z01 l1: murata lqh3c100 or sumida clq61-100n d1: motorola mbr0520lt1 v c gnd 3.3v 5v 125ma c1 15 f 10v + c2 10 f ceramic low profile 3.3 to 5v converter 5v to 12v boost converter 5v to 12v boost converter efficiency single li-ion to 5v dc/dc converter efficiency single li-ion to 5v dc/dc converter load current (ma) 1 efficiency (%) 90 85 80 75 70 10 100 1317 ta04a load current (ma) 1 10 100 1000 efficiency (%) 90 85 80 75 70 65 60 1317 ta05a v in = 4.2v v in = 3.5v v in = 2.7v
13 lt1317/lt1317b typical applicatio s u 2-cell to 5v dc/dc converter with undervoltage lockout v in lbi sw fb lbo lt1317 l1 10 h d1 shdn 33k 332k 1% 340k 1m 100k 301k 1m 1% 3.3nf 470pf 1317 ta07 d1: motorola mbr0520lt1 l1: sumida cd43-101 starts at v in = 1.9v stops at v in = 1.6v v c gnd 2 alkaline cells 5v 130ma 22 f 10v + 100 f 10v + v in sw fb lt1317 l1a 20 h ceramic 10 f, 16v l1b d1 shdn 33k 100k 432k 1% v out 4.1v 110ma 1m 1% 3.3nf 1317 ta08 d1: motorola mbr0520lt1 l1: coiltronics ctx20-1 q1: 2n3904 v c gnd v in 1.5v to 10v 15 f 20v + 47 f 10v + q1 universal wall cube to 4.1v v in sw fb lt1317/lt1317b l1 22 h d1 shdn 33k 178k 8.2v 400ma 1m 3.3nf 100pf 1317 ta09 d1: motorola mbr0520lt1 l1: sumida cd43-220 v c gnd shutdown 22 f 16v + 47 f 16v + 2 li-ion cells (5.8v to 8.4v) 22pf 2 li-ion to 8.2v dc/dc converter
14 lt1317/lt1317b typical applicatio s u single li-ion cell to 4v/70ma, C 4v/10ma v in lt1317 4.5v to 2.5v l1 22 m h l2 22 m h d1 fb shdn shutdown 33k 442k 4v 70ma 1.00m 3.3nf 100pf c1: c2: c3: d1: d2: l1, l2: murata grm235y5v107z01 avx tajb336m010 avx taja156m010 mbr0520 bat54s (dual diode) murata lqh3c220k04 1317 ta02 1 m f ceramic 1 m f ceramic c2 33 m f c1 1 m f li-ion cell v c gnd sw + c3 15 m f d2 4v 10ma + v in sw fb lt1317b l1 22 h 680 150pf d2 d1 33k 5.9k 150k 3300pf 1317 ta11 c1: avx taj156m010 c2: sanyo 35cv33gx c3, c4, c5, c6: 0.1 f ceramic d1, d2, d3: motorola mmbd914lt1 l1: murata lqh3c220 v c gnd v in 3v to 6v v out 33v 0ma to 10ma c1 15 f 10v + + c3 0.1 f c2 10 f 35v c4 0.1 f c5 0.1 f c6 0.1 f d3 47 low noise 33v varactor bias supply
15 lt1317/lt1317b package descriptio n u dimensions in inches (millimeters) unless otherwise noted. information furnished by linear technology corporation is believed to be accurate and reliable. however, no responsibility is assumed for its use. linear technology corporation makes no represen- tation that the interconnection of its circuits as described herein will not infringe on existing patent rights. ms8 package 8-lead plastic msop (ltc dwg # 05-08-1660) msop (ms8) 1197 * dimension does not include mold flash, protrusions or gate burrs. mold flash, protrusions or gate burrs shall not exceed 0.006" (0.152mm) per side ** dimension does not include interlead flash or protrusions. interlead flash or protrusions shall not exceed 0.006" (0.152mm) per side 0.021 0.006 (0.53 0.015) 0 ?6 typ seating plane 0.007 (0.18) 0.040 0.006 (1.02 0.15) 0.012 (0.30) ref 0.006 0.004 (0.15 0.102) 0.034 0.004 (0.86 0.102) 0.0256 (0.65) typ 12 3 4 0.192 0.004 (4.88 0.10) 8 7 6 5 0.118 0.004* (3.00 0.102) 0.118 0.004** (3.00 0.102) s8 package 8-lead plastic small outline (narrow 0.150) (ltc dwg # 05-08-1610) 1 2 3 4 0.150 ?0.157** (3.810 ?3.988) 8 7 6 5 0.189 ?0.197* (4.801 ?5.004) 0.228 ?0.244 (5.791 ?6.197) 0.016 ?0.050 0.406 ?1.270 0.010 ?0.020 (0.254 ?0.508) 45 0 ?8 typ 0.008 ?0.010 (0.203 ?0.254) so8 0996 0.053 ?0.069 (1.346 ?1.752) 0.014 ?0.019 (0.355 ?0.483) 0.004 ?0.010 (0.101 ?0.254) 0.050 (1.270) typ dimension does not include mold flash. mold flash shall not exceed 0.006" (0.152mm) per side dimension does not include interlead flash. interlead flash shall not exceed 0.010" (0.254mm) per side * **
16 lt1317/lt1317b ? linear technology corporation 1998 13177bf lt/tp 1198 4k ? printed in the usa typical applicatio n u linear technology corporation 1630 mccarthy blvd., milpitas, ca 95035-7417 (408) 432-1900 l fax: (408) 434-0507 l www.linear-tech.com digital camera power supply 24v shutdown v in sw fb lt1317 l pri :15 h l a l b l c 7 8 5 6 3 4 2 1 d1 10k 604k 1m 10k 3300pf 1317 ta10 c1, c4: avx tpsc226m016 c2: avx tpsc106m006 c3: ceramic (i.e. avx, many others) c5: sanyo 35cv10gx d1, d2: mbr0520lt1 (motorola) or equivalent d3: mmbd914lt1 (motorola) or equivalent t1: coiltronics ctx02-14272-x1 v c gnd 3.3v 150ma 5v 20ma 18v 3ma c1 22 f 10v 4 aa cells (3.2v to 6.5v) c3 1 f, 16v + shdn c2 100 f 6v + d2 c4 22 f 10v + d3 t1 c5 10 f 35v + part number description comments ltc ? 1163 triple high side driver for 2-cell inputs 1.8v minimum input, drives n-channel mosfets ltc1174 micropower step-down dc/dc converter 94% efficiency, 130 m a i q , 9v to 5v at 300ma lt1302 high output current micropower dc/dc converter 5v/600ma from 2v, 2a internal switch, 200 m a i q lt1304 2-cell micropower dc/dc converter low-battery detector active in shutdown lt1307 single cell micropower 600khz pwm dc/dc converter 3.3v at 75ma from 1 cell, msop package ltc1440/1/2 ultralow power single/dual comparators with reference 2.8 m a i q , adjustable hysteresis ltc1516 2-cell to 5v regulated charge pump 12 m a i q , no inductors, 5v at 50ma from 3v input lt1521 micropower low dropout linear regulator 500mv dropout, 300ma current, 12 m a i q related parts


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